This scanning electron microscope image shows a zinc oxide (ZnO) nanowire photodetector device grown by photolithography.
This scanning electron micrograph shows a gallium nitride nanowire photodetector device with a zinc oxide core grown by e-beam lithography.
The geometry and structure of nanowires make them both sensitive to light and efficient low-noise signaling devices, so they are ideally suited for applications involving light—such as detection, imaging, information storage, and intrachip optical communications. In addition, different types of nanowires can be combined to create devices sensitive to different wavelengths of light.
• SIZE: The nanowire has a diameter of about 200 nm.