This is scanning electron microscope image of indium arsenide nanowires.
Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.
Shadi Dayeh, University of California at San Diego
The width of the sample imaged is about 10 µm.
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