Tool: Scanning Electron Microscope

Multiwalled Carbon Nanotube Yarn

Multiwalled Carbon Nanotube Yarn
This scanning electron microscope image shows nanotube yarn fibers drawn from a "nanotube forest." Nanometer and micron-sized yarn or fibers drawn from multiwalled carbon nanotubes can have tensile strengths comparable to or exceeding those of spider silk. Replacing metal wires in electronic textiles with these nanotube yarns could lead to important new functionalities, such as the ability to actuate (as an artificial muscle) and to store energy (as a fiber super-capacitor or battery).

Minimum credit: 

Mei Zhang, UTD

Size: 

The yarn's diameter is about 1 µm. The nanotubes from which it is being drawn are each about 10 nm in diameter.

Pixels: Width: 

1017

Pixels: Height: 

713

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Nanowire Resting on a Human Hair

Nanowire Resting on a Human Hair
This scanning electron microscope image shows the relative thickness of typical nanowire in comparison with a strand of human hair.

Minimum credit: 

Eric Majur, Harvard University

Size: 

The hair is about 100 µm in diameter; the nanowire's diameter is about 100 nm.

Pixels: Width: 

800

Pixels: Height: 

530

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Human Hair

Human Hair
This is a scanning electron microscope image of a single strand of human hair.

Minimum credit: 

Bryan Bandli, Scanning Electron Microscopy Laboratory, University of Minnesota

Size: 

The diameter of a human hair ranges from about 50 µm to 100 µm.

Pixels: Width: 

1280

Pixels: Height: 

960

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Singlewalled Nanotube Paper

Singlewalled Nanotube Paper
A bundle of singlewalled nanotubes processed into a thin sheet is shown in this scanning electron microscope image. Singlewalled nanotubes are extremely important in the continuing miniaturization of electronic devices. These tubes have an average diameter of 1-2 nm. Their electrical properties have led to their investigation as super capacitors for storing electrical charges.

Minimum credit: 

Mei Zhang, University of Texas at Dallas

Size: 

The thickness of the sheet is about 50 µm.

Pixels: Width: 

1024

Pixels: Height: 

768

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Indium Arsenide Nanowire Field-Effect Transistor

Indium Arsenide Nanowire Field-Effect Transistor
This scanning electron microscope image shows an indium arsenide (InAs) nanowire field-effect transistor. Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The nanowire at center is about 5 µm long.

Pixels: Width: 

645

Pixels: Height: 

430

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Indium Arsenide Nanowires

Indium Arsenide Nanowires
This is scanning electron microscope image of indium arsenide nanowires. Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The width of the sample imaged is about 10 µm.

Pixels: Width: 

645

Pixels: Height: 

433

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Zinc Oxide Nanowires

Zinc Oxide Nanowires
This is a scanning electron microscope image of vertical arrays of zinc oxide (ZnO) nanowires on a sapphire substrate. Zinc oxide (ZnO) is an ideal material for nanoscale optoelectronics, electronics, and biotechnology applications. Numerous ZnO-based devices have already been developed, including nanowire field effect transistors, piezoelectric nanogenerators, optically pumped nanolasers, and biosensors.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The sample displayed in the image is about 10 µm wide.

Pixels: Width: 

1102

Pixels: Height: 

965

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Nanomechanical Antenna Oscillator

Nanomechanical Antenna Oscillator
This scanning electron micrograph depicts a silicon crystal nanomachined into an antenna oscillator that can vibrate about 1.5 billion times per second. The antenna-type oscillator is a nanomachined single-crystal structure of silicon. Using this design, movements 1000 times smaller than nanometer scale are amplified into motion of the entire micron-sized structure. Operating at gigahertz speeds, the technology could help further miniaturize wireless communication devices like cell phones. This macroscopic nanomechanical oscillator consists of roughly 50 billion silicon atoms.

Minimum credit: 

Raj Mohanty, Boston University

Size: 

The central silicon beam is 10.7 µm long and 400 nm wide; the "paddles" along the sides are 500 nm long and 200 nm wide.

Pixels: Width: 

1200

Pixels: Height: 

800

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Nanoscale Interface for Spin Injection

Nanoscale Interface for Spin Injection
This is a scanning electron micrograph of a nanoscale interface for spin injection in a nanomechanical torsion oscillator used for measuring tiny amounts of torque. This interface is built on a silicon-based nanomechanical torsion oscillator, a device used to measure tiny amounts of torque. The device contains a central wire running from top left to bottom right. The top surface of one part of this wire is coated with a 50 nm layer of cobalt (which is magnetic); the top surface of the other part is coated with 50 nm of non-magnetic gold. As electrons travel from the magnetic into the non-magnetic part of the nanowire, they flip their spin directions, causing mechanical twisting of the wire.

Minimum credit: 

Raj Mohanty, Boston University

Size: 

The diameter of the nanowire at center is about 100 nm.

Pixels: Width: 

585

Pixels: Height: 

483

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery

Spin Torsion Oscillator

Spin Torsion Oscillator
This scanning electron micrograph shows a nanomechanical torsion oscillator used by computer engineers to measure extremely small amounts of torque. A nanomechanical torsion oscillator is used to measure extremely small torsion or twisting forces smaller than those created by the untwisting of a strand of DNA. When current passes from magnetic into non-magnetic materials, the directional spins of the electrons flip at the boundary, producing a mechanical torque. This device can measure the torque in a metallic nanowire with unprecedented sensitivity. This approach to measuring torque has applications in spintronics as well as in fundamental physics, chemistry, and biology, and is particularly important in the hard disc industry.

Minimum credit: 

Raj Mohanty, Boston University

Size: 

The nanowire at the center of this image has a diameter of about 80 nm.

Pixels: Width: 

1800

Pixels: Height: 

975

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

Return to gallery