Sensors

Multiwalled Carbon Nanotube Yarn

Multiwalled Carbon Nanotube Yarn
This scanning electron microscope image shows nanotube yarn fibers drawn from a "nanotube forest." Nanometer and micron-sized yarn or fibers drawn from multiwalled carbon nanotubes can have tensile strengths comparable to or exceeding those of spider silk. Replacing metal wires in electronic textiles with these nanotube yarns could lead to important new functionalities, such as the ability to actuate (as an artificial muscle) and to store energy (as a fiber super-capacitor or battery).

Minimum credit: 

Mei Zhang, UTD

Size: 

The yarn's diameter is about 1 µm. The nanotubes from which it is being drawn are each about 10 nm in diameter.

Pixels: Width: 

1017

Pixels: Height: 

713

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Indium Arsenide Nanowire Field-Effect Transistor

Indium Arsenide Nanowire Field-Effect Transistor
This scanning electron microscope image shows an indium arsenide (InAs) nanowire field-effect transistor. Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The nanowire at center is about 5 µm long.

Pixels: Width: 

645

Pixels: Height: 

430

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Indium Arsenide Nanowires

Indium Arsenide Nanowires
This is scanning electron microscope image of indium arsenide nanowires. Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The width of the sample imaged is about 10 µm.

Pixels: Width: 

645

Pixels: Height: 

433

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Zinc Oxide Nanowires

Zinc Oxide Nanowires
This is a scanning electron microscope image of vertical arrays of zinc oxide (ZnO) nanowires on a sapphire substrate. Zinc oxide (ZnO) is an ideal material for nanoscale optoelectronics, electronics, and biotechnology applications. Numerous ZnO-based devices have already been developed, including nanowire field effect transistors, piezoelectric nanogenerators, optically pumped nanolasers, and biosensors.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The sample displayed in the image is about 10 µm wide.

Pixels: Width: 

1102

Pixels: Height: 

965

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Nanomechanical Antenna Oscillator

Nanomechanical Antenna Oscillator
This scanning electron micrograph depicts a silicon crystal nanomachined into an antenna oscillator that can vibrate about 1.5 billion times per second. The antenna-type oscillator is a nanomachined single-crystal structure of silicon. Using this design, movements 1000 times smaller than nanometer scale are amplified into motion of the entire micron-sized structure. Operating at gigahertz speeds, the technology could help further miniaturize wireless communication devices like cell phones. This macroscopic nanomechanical oscillator consists of roughly 50 billion silicon atoms.

Minimum credit: 

Raj Mohanty, Boston University

Size: 

The central silicon beam is 10.7 µm long and 400 nm wide; the "paddles" along the sides are 500 nm long and 200 nm wide.

Pixels: Width: 

1200

Pixels: Height: 

800

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Zinc Oxide Nanowire Photodetector

Zinc Oxide Nanowire Photodetector
This scanning electron microscope image shows a zinc oxide (ZnO) nanowire photodetector device grown by photolithography. Nanowires geometry and structure make them both sensitive to light and efficient low-noise signaling devices, so they are ideally suited for applications involving light—such as detection, imaging, information storage, and intrachip optical communications. In addition, different types of nanowires can be combined to create devices sensitive to different wavelengths of light. Zinc oxide's (ZnO) electrical, optoelectronic, and photochemical properties have led to its use in solar cells, transparent electrodes, and blue/UV light-emitting devices.

Minimum credit: 

Cesare Soci, University of California at San Diego

Size: 

The separation between the "fingers" is 2 µm.

Pixels: Width: 

645

Pixels: Height: 

484

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Nanowire Photodetector

Nanowire Photodetector
This scanning electron micrograph shows a gallium nitride nanowire photodetector device with a zinc oxide core grown by e-beam lithography. The geometry and structure of nanowires make them both sensitive to light and efficient low-noise signaling devices, so they are ideally suited for applications involving light—such as detection, imaging, information storage, and intrachip optical communications. In addition, different types of nanowires can be combined to create devices sensitive to different wavelengths of light.

Minimum credit: 

Dr. Xinyu Bao, University of California at San Diego

This is a NISE Network product: 

no

Size: 

The nanowire has a diameter of about 200 nm.

Pixels: Width: 

646

Pixels: Height: 

484

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Silicon Nano-Biosensor

Silicon Nano-Biosensor
This scanning electron micrograph depicts the functional part of a nano-biosensor containing silicon nanowires. Field effect transistors are best known for their key role in computer microprocessors, but their compatibility with various microfabrication strategies has also led researchers to study them for biosensing applications. For example, glucose biosensors may lead to important innovations in the management of diabetes. The lithographic manufacturing processes involved in their production may mean that such sensors can be produced in quantity and scaled for different applications.

Minimum credit: 

Raj Mohanty, Boston University

Size: 

Each nanowire has a diameter of 50 nm.

Pixels: Width: 

833

Pixels: Height: 

709

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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Aligned Multiwalled Carbon Nanotube Forest

Aligned Multiwalled Carbon Nanotube Forest
This scanning electron microscope image shows a wall of carbon nanotubes. Multiwalled carbon nanotubes are nested within each other. They exhibit extraordinary strength and unique electrical properties. Multiwalled carbon nanotubes are actually tubes nested within tubes. These cylindrical carbon molecules have extraordinary strength and important electrical properties, making them potentially useful for many applications in electronics, optics, and other areas of materials science, as well as architectural fields.

This is a NISE Network product: 

no

Size: 

The diameter of a nanotube is around 10 nm.

Pixels: Width: 

1024

Pixels: Height: 

768

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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